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MITSUBISHI SEMICONDUCTOR
M54587P/FP
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION M54587P and M54587FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION
NC IN1 IN2 IN3 IN4 INPUT IN5
6 7 8 9 10 15 14 13 12 11 1 2 3 4 5 20 19 18 17 16
COM COMMON O1 O2 O3 O4 OUTPUT O5 O6 O7 O8 VCC NC : No connection
FEATURES q High breakdown voltage (BVCEO 50V) q High-current driving (IC(max) = 500mA) q "L" active level input q With input diode q With clamping diodes q Wide operating temperature range (Ta = -20 to +75C)
IN6 IN7 IN8 GND
20P4(P) Package type 20P2N-A(FP)
APPLICATION Interfaces between microcomputers and high-voltage, highcurrent drive systems, drives of relays and MOS-bipolar logic IC interfaces
CIRCUIT DIAGRAM (EACH CIRCUIT)
VCC 7K INPUT 7K 2.7K 7.2K 3K GND COM OUTPUT
FUNCTION The M54587 is produced by adding PNP transistors to M54585 inputs. Eight circuits having active L-level inputs are provided. Resistance of 7k and diode are provided in series between each input and PNP transistor base. The input diode is intended to prevent the flow of current from the input to the VCC. Without this diode, the current flow from "H" input to the VCC and the "L" input circuits is activated, in such case where one of the inputs of the 8 circuits is "H" and the others are "L" to save power consumption. The diode is inserted to prevent such misoperation. This device is most suitable for a driver using NMOS IC output especially for the driver of current sink. Collector current is 500mA maximum. Collector-emitter supply voltage is 50V. The M54587FP is enclosed in a molded small flat package, enabling space saving design.
The eight circuits share the Vcc, COM and GND The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit :
Mar.2002
MITSUBISHI SEMICONDUCTOR
M54587P/FP
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
ABSOLUTE MAXIMUM RATINGS
Symbol VCC VCEO VI IC IF VR Pd Topr Tstg Parameter Supply voltage Collector-emitter voltage Input voltage
(Unless otherwise noted, Ta = -20 ~ +75C)
Conditions Output, H Current per circuit output, L
Collector current Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature
Ratings 10 -0.5 ~ +50 -0.5 ~ VCC 500 500 50 1.79/1.1 -20 ~ +75 -55 ~ +125
Unit V V V mA mA V W C C
Ta = 25C, when mounted on board
RECOMMENDED OPERATING CONDITIONS
Symbol VCC Supply voltage Parameter
(Unless otherwise noted, Ta = -20 ~ +75C)
min 4 0 0 VCC-0.7 0
Limits typ 5 -- -- -- --
max 8 400
Unit V
IC
VIH VIL
VCC = 5V, Duty Cycle P : no more than 6% Collector current FP : no more than 5% Per channel VCC = 5V, Duty Cycle P : no more than 34% FP : no more than 15% "H" input voltage "L" input voltage
mA 200 VCC VCC-3.6 V V
ELECTRICAL CHARACTERISTICS
Symbol V (BR) CEO VCE(sat) II VF IR ICC hFE Parameter
(Unless otherwise noted, Ta = -40 ~ +85C)
Test conditions ICEO = 100A IC = 400mA IC = 200mA
Limits min 50 -- -- -- -- -- -- 2000 typ -- 1.2 0.95 -290 1.4 0.1 1.9 3500 max -- 2.4 1.6 -600 2.4 100 3 --
Unit V V A V A mA --
Collector-emitter breakdown voltage
Collector-emitter saturation voltage VI = VCC-3.6V Input current Clamping diode forward volltage Clamping diode reverse current Supply current (AN only Input) DC amplification factor
VI = VCC-3.6V IF = 400mA VR = 50V VCC = 5V, VI = VCC-3.5V VCC = 5V, VCE = 4V, IC = 350mA, Ta = 25C
: The typical values are those measured under ambient temperature (Ta) of 25C. There is no guarantee that these values are obtained under any conditions.
SWITCHING CHARACTERISTICS
Symbol ton toff Parameter Turn-on time Turn-off time
(Unless otherwise noted, Ta = 25C)
Test conditions CL = 15pF (note 1)
Limits min -- -- typ 120 2400 max -- --
Unit ns ns
Mar.2002
MITSUBISHI SEMICONDUCTOR
M54587P/FP
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
NOTE 1 TEST CIRCUIT
INPUT VCC Measured device OPEN PG 50 OUTPUT VO
TIMING DIAGRAM
INPUT 50%
RL
50%
OUTPUT
CL
50%
50%
ton
(1)Pulse generator (PG) characteristics : PRR=1kHz, tw = 10s, tr = 6ns, tf = 6ns, Zo = 50 VI = 0.4 ~ 4V (2)Input-output conditions : RL = 30, Vo = 10V, Vcc = 4V (3)Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes
toff
TYPICAL CHARACTERISTICS
Thermal Derating Factor Characteristics 2.0
M54587P
Output Saturation Voltage Collector Current Characteristics 500
Power dissipation Pd (W)
1.5
M54587FP
Collector current Ic (mA)
400
300
1.0
200
VI = 1.4V VCC = 5V
Ta = 75C Ta = 25C Ta = -20C
0.5
100
0
0
25
50
75
100
0
0
0.5
1.0
1.5
2.0
Ambient temperature Ta (C) Duty Cycle-Collector Characteristics (M54587P) 500
1
Output saturation voltage VCE(sat) (V) Duty Cycle-Collector Characteristics (M54587P) 500
1
Collector current Ic (mA)
2 3 4 5
*The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Vcc = 5V *Ta = 25C
300
Collector current Ic (mA)
400
400
300
2
200
7
6 8
200
*The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Vcc = 5V *Ta = 75C
100
100
3 4 5 6 7 8
0
0
20
40
60
80
100
0
0
20
40
60
80
100
Duty cycle (%)
Duty cycle (%)
Mar.2002
MITSUBISHI SEMICONDUCTOR
M54587P/FP
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
Duty Cycle-Collector Characteristics (M54587FP) 500
1
Duty Cycle-Collector Characteristics (M54587FP) 500
Collector current Ic (mA)
300
2 3 4 5 6 7 8
Collector current Ic (mA)
400
400
300
1
200
*The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Vcc = 5V *Ta = 25C
200
*The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Vcc = 5V *Ta = 75C
2 3 4 65 87
100
100
0
0
20
40
60
80
100
0
0
20
40
60
80
100
Duty cycle (%)
Duty cycle (%) DC Amplification Factor Collector Current Characteristics 104
DC amplification factor hFE
7 5 3
Output Current Characteristics 500
Collector current IC (mA)
400
VCC = 4V VCE = 4V
Ta = 75C Ta = 25C Ta = -20C
300
103
7 5 3 VCC = 5V VCE = 4V
Ta = 75C Ta = 25C Ta = -20C
200
100
0
0
1
2
3
4
102 1 10
3
5 7 102
3
5 7 103
Input voltage Vcc-VI (V)
Collector current IC (mA)
Input Characteristics -1.0
VCC = 5V
Ta = 75C Ta = 25C Ta = -20C
Driver Supply Characteristics 5
VI = 0V
Ta = 75C Ta = 25C Ta = -20C
-0.6
Supply Current Icc (mA)
-0.8
Input Current II (mA)
4
3
-0.4
2
-0.2
1
0
0
1
2
3
4
5
0
0
2
4
6
8
10
IInput voltage Vcc-VI (V)
Supply voltage Vcc (V)
Mar.2002
MITSUBISHI SEMICONDUCTOR
M54587P/FP
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
Clamping Diode Characteristics 500
Forward bias current IF (mA)
Ta = 75C Ta = 25C Ta = -20C
400
300
200
100
0
0
0.5
1.0
1.5
2.0
Forward bias voltage VF (V)
Mar.2002

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